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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD243/A/B/C DESCRIPTION With TO-220C package Complement to type BD244/A/B/C APPLICATIONS For medium power linear and switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL PARAMETER CONDITIONS BD243 BD243A BD243B VCBO HAN INC Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector-base voltage GE S BD243C BD243 BD243A BD243B BD243C Open emitter EMIC OND TOR UC VALUE 45 60 80 100 45 60 UNIT V VCEO Open base 80 100 Open collector 5 6 10 2 TC=25ae 65 150 -65~150 ae ae V VEBO IC ICM IB PC Tj Tstg V A A A W Collector power dissipation Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD243/A/B/C CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER BD243 BD243A IC=30mA; IB=0 BD243B BD243C VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage BD243/A ICEO Collector cut-off current BD243B/C VCE=60V; IB=0 VCE=45V; VBE=0 VCE=60V; VBE=0 VCE=80V; VBE=0 IC=6A;IB=1 A IC=6A ; VCE=4V VCE=30V; IB=0 0.7 mA 80 100 1.5 2.0 V V CONDITIONS MIN 45 60 V TYP. MAX UNIT SYMBOL VCEO(SUS) Collector-emitter sustaining voltage ICES IN Collector cut-off current BD243 BD243A BD243B IEBO hFE-1 hFE-2 Emitter cut-off current DC current gain DC current gain ANG CH BD243C EMIC ES VCE=100V; VBE=0 VEB=5V; IC=0 IC=0.3A ; VCE=4V IC=3A ; VCE=4V OND 30 15 TOR UC 0.4 1 mA mA 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BD243/A/B/C SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 |
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